Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals

✍ Scribed by A. N. Morozov; V. T. Bublik; O. Yu. Morozova

• Publisher: John Wiley and Sons
• Year: 1986
• Tongue: English
• Weight: 424 KB
• Volume: 21
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170210711

✦ Synopsis

The nature of the main electron trap, EL2, in undoped scniiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point tlefects which, most probably, are responsible for the EL2 level are antisite Aso, defwts or ( A s ~-V G ~) coiiiplexes which are indistinguishable from the thermodynamic standpoint. The enthalpy and entropy of A S G ~ formation according to the reaction Asls + Vc.a 2 s Asca + Vas are equal to 0.5 eV and -7k, respectively.