Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

✍ Scribed by Hull, R. ;Stach, E. A. ;Tromp, R. ;Ross, F. ;Reuter, M.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 269 KB
• Volume: 171
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199901)171:1<133::aid-pssa133>3.0.co;2-d

✦ Synopsis

We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order 1 GPa, and the length of the propagating dislocation segment may be varied from nm to hundreds of nm. Results are presented from the interaction of strain-relieving dislocations with GeSi free surfaces, with point defects generated by ion implantation, and with other dislocations.