Interactions of Moving Dislocations in S
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Hull, R. ;Stach, E. A. ;Tromp, R. ;Ross, F. ;Reuter, M.
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Article
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1999
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John Wiley and Sons
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English
β 269 KB
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We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order