Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC
β Scribed by E.N. Kalabukhova; S.N. Lukin; D.V. Savchenko; W.C. Mitchel
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 202 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V Γ Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si ΓΎ Zn Γ°Ge ΓΎ Zn Γ could be proved. The influence of the group IV-ions on the bonding behavior for th
From the temperature dependence of the hole concentration in lightly Al-doped 4H-SiC epilayers, a shallow acceptor with E V ΓΎ 0:2 eV, which is an Al atom Γ°Al Si Γ at a Si sublattice site, and an unknown deep defect with E V ΓΎ 0:35 eV are found, where E V is the valence band maximum. In unirradiated