𝔖 Bobbio Scriptorium
✦   LIBER   ✦

EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors

✍ Scribed by K. Sato

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
266 KB
Volume
6
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

EPR and electrical studies of native poi
EPR and electrical studies of native point defects in ZnSiP2 semiconductors
✍ W Gehlhoff; D Azamat; A Krtschil; A Hoffmann; A Krost 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 385 KB

We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V À Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si þ Zn ðGe þ Zn Þ could be proved. The influence of the group IV-ions on the bonding behavior for th

Application of deep-level transient spec
Application of deep-level transient spectroscopy for monitoring point defects in III–V semiconductors
✍ P. Kamiński 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 272 KB

Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an