We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V À Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si þ Zn ðGe þ Zn Þ could be proved. The influence of the group IV-ions on the bonding behavior for th
✦ LIBER ✦
EPR studies of native and impurity-related defects in II–IV–V2 semiconductors
✍ Scribed by W. Gehlhoff; D. Azamat; A. Hoffmann
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 329 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1369-8001
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