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EPR identification of intrinsic and transition metal-related defects in ZnGeP2 and other II–IV–V2 compounds

✍ Scribed by W. Gehlhoff; A. Hoffmann


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
266 KB
Volume
404
Category
Article
ISSN
0921-4526

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Transition metals in ZnGeP2 and other II
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Semiconductors that exhibit room-temperature ferromagnetism are central to the development of semiconductor spintronics. Transition metal (TM)-doped A II B IV C V 2 are a promising class of such system. These ternary compound semiconductors have two metal sites A and B that can be substituted by the