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Anisotropy of temperature factors and interatomic forces in II-IV-V2 semiconductors

✍ Scribed by Dr. A. A. Vaipolin


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
552 KB
Volume
18
Category
Article
ISSN
0232-1300

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✦ Synopsis


~-A. A. VAIPOLIN -4. F. Ioffe Physicotechnical Institute, Scadcmy of Science of the USSR, Leningrad Anisotropy of Temperature Factors and Interatomic Forces in 11-IV-V, Semiconductors

An imcomplete set of X-ray reflections with high indices ("back" reflections by MoK,,radiation) was measured for six 11-IV-V, semiconducting compounds of the chalcopyrite structure. The site parameter of the V-atom and the temperature parameters proportional t o the components of mean sqsare displacements of atoms ( B i k = 8n2u,"k) were detcrmined. General peculiarities of the relation of temperature factor constants and its variation within this family of compounds are reported. A qualitative crystallochemical interpretation of this relation is proposed on the basis of the atomic interaction scheme taking into account the principal and auxiliary bonds in the first and the second coordination sphere, respectively.


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## Abstract A simplified version of the Keating model originally derived for defect‐chalcopyrite compounds is extended to include all A^II^B~2~^III^C~4~^VI^ compounds with ordered arrays of vacancies. It is shown that the trends and frequencies of the nonpolar optical modes of these compounds can b