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Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system

✍ Scribed by K. Shohno; M. Takigawa; T. Nakada

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 456 KB
Volume: 24-25
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(74)90303-0

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## Abstract Epitaxial growth of GaAs has been achieved on CaF~2~, α‐Al~2~O~3~ and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in