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Metalorganic beam epitaxial growth of GaAs on Si substrates treated by a partially ionized mixture of H2 and AsH3

โœ Scribed by Katsuhiro Yokota; Kazuaki Yamaura; Hitoki Tokuda; Susumu Tamura


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
445 KB
Volume
119
Category
Article
ISSN
0022-0248

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