Metalorganic beam epitaxial growth of GaAs on Si substrates treated by a partially ionized mixture of H2 and AsH3

✍ Scribed by Katsuhiro Yokota; Kazuaki Yamaura; Hitoki Tokuda; Susumu Tamura

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 445 KB
• Volume: 119
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(92)90671-5