✦ LIBER ✦
517. Influence of substrate temperature and partial pressure of PCl3 on trapping of phosphorus by epitaxial silicon film during the growth process: A S Lyutovich et al, Izv AN UzSSR Ser Fiz Mat Nauk, No 2, 1973, 60–62 (in Russian).
- Publisher
- Elsevier Science
- Year
- 1974
- Tongue
- English
- Weight
- 182 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0042-207X
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