✦ LIBER ✦

Gas-source MBE growth of n-type InP using TEI, PH3, and Si2H6

✍ Scribed by H. Ando; N. Okamoto; A. Sandhu; T. Fujii

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Gas-source MBE growth and n-type doping

✍ T. Fujii; H. Ando; A. Sandhu; H. Ishikawa; Y. Sugiyama 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 422 KB

Growth of carbon-doped base GaAs/AlGaAs

✍ Hideyasu Ando; Toshio Fujii; Adarsh Sandhu; Tsuyoshi Takahashi; Hideaki Ishikawa 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 470 KB

Growth rate dependence on GeH4 during ga

✍ S.M. Mokler; N. Ohtani; M.H. Xie; X. Zhang; B.A. Joyce 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 407 KB

Selective epitaxial growth of Ge and SiG

✍ Hiroyuki Wado; Tadami Shimizu; Seiji Ogura; Makoto Ishida; Tetsuro Nakamura 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 445 KB

The growth properties of SiGe films on S

✍ Hiroyuki Wado; Tadami Shimizu; Makoto Ishida; Tetsuro Nakamura 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 433 KB

Growth of n- and p-ZnSe by gas source mo

✍ Masayuki Imaizumi; Yasuyuki Endoh; Ken-ichi Ohtsuka; Toshiro Isu 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 401 KB