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Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4

✍ Scribed by S.M. Mokler; N. Ohtani; M.H. Xie; X. Zhang; B.A. Joyce


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
407 KB
Volume
127
Category
Article
ISSN
0022-0248

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