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Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
✍ Scribed by S.M. Mokler; N. Ohtani; M.H. Xie; X. Zhang; B.A. Joyce
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 407 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
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