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Epitaxial graphene top-gate FETs on silicon substrates

✍ Scribed by Hyun-Chul Kang; Hiromi Karasawa; Yu Miyamoto; Hiroyuki Handa; Hirokazu Fukidome; Tetsuya Suemitsu; Maki Suemitsu; Taiichi Otsuji

Book ID
108271808
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
672 KB
Volume
54
Category
Article
ISSN
0038-1101

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The