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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

✍ Scribed by Moon, J.S.; Curtis, D.; Bui, S.; Hu, M.; Gaskill, D.K.; Tedesco, J.L.; Asbeck, P.; Jernigan, G.G.; VanMil, B.L.; Myers-Ward, R.L.; Eddy, C.R.; Campbell, P.M.; Weng, X.


Book ID
111689960
Publisher
IEEE
Year
2010
Tongue
English
Weight
237 KB
Volume
31
Category
Article
ISSN
0741-3106

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