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Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers

✍ Scribed by Moon, J.S.; Curtis, D.; Bui, S.; Marshall, T.; Wheeler, D.; Valles, I.; Kim, S.; Wang, E.; Weng, X.; Fanton, M.

Book ID
115439561
Publisher
IEEE
Year
2010
Tongue
English
Weight
408 KB
Volume
31
Category
Article
ISSN
0741-3106

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The