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Current saturation in zero-bandgap, top-gated graphene field-effect transistors

✍ Scribed by Meric, Inanc; Han, Melinda Y.; Young, Andrea F.; Ozyilmaz, Barbaros; Kim, Philip; Shepard, Kenneth L.

Book ID
109941747
Publisher
Nature Publishing Group
Year
2008
Tongue
English
Weight
693 KB
Volume
3
Category
Article
ISSN
1748-3387

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The