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Top-gated graphene field-effect transistors on SiC substrates

โœ Scribed by Ma, Peng; Jin, Zhi; Guo, JianNan; Pan, HongLiang; Liu, XinYu; Ye, TianChun; Jia, YuPing; Guo, LiWei; Chen, XiaoLong

Book ID
113083509
Publisher
Springer
Year
2012
Tongue
English
Weight
556 KB
Volume
57
Category
Article
ISSN
1001-6538

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The