๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Epitaxial graphene field-effect transistors on silicon substrates

โœ Scribed by Hyun-Chul Kang; Hiromi Karasawa; Yu Miyamoto; Hiroyuki Handa; Tetsuya Suemitsu; Maki Suemitsu; Taiichi Otsuji

Book ID
108271798
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
1005 KB
Volume
54
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Top- and side-gated epitaxial graphene f
Top- and side-gated epitaxial graphene field effect transistors
โœ Li, Xuebin ;Wu, Xiaosong ;Sprinkle, Mike ;Ming, Fan ;Ruan, Ming ;Hu, Yike ;Berge ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 357 KB

## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The