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Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

โœ Scribed by Foxe, M.; Lopez, G.; Childres, I.; Jalilian, R.; Patil, A.; Roecker, C.; Boguski, J.; Jovanovic, I.; Chen, Y.P.


Book ID
111690012
Publisher
IEEE
Year
2012
Tongue
English
Weight
598 KB
Volume
11
Category
Article
ISSN
1536-125X

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Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n