Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping
β Scribed by Zhang, Yuan; Blom, Paul W. M.
- Book ID
- 120747237
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 636 KB
- Volume
- 97
- Category
- Article
- ISSN
- 0003-6951
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## Abstract We investigate the mobility of poly(3βhexylthiophene) (P3HT) over a carrierβdensity range from 10^15^ to 10^20^βcm^β3^. Holeβonly diodes were used for densities below 10^16^βcm^β3^ and fieldβeffect transistors were used for carrier densities higher than 10^18^βcm^β3^. To fill the gap, i
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al dopin
are gratefully acknowledged. We also thank Dr. Tony Jenkins (Merck Chemicals Ltd.) for kindly providing one of the P3HT samples used in this study. Dr. Christian Chaumont is gratefully acknowledged for performing the XRD measurements on oriented TCB thin films. Supporting Information is available on