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Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

✍ Scribed by Jakob J. Brondijk; Francesco Maddalena; Kamal Asadi; Herman J. van Leijen; Martin Heeney; Paul W. M. Blom; Dago M. de Leeuw

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
318 KB
Volume
249
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^−3^. Hole‐only diodes were used for densities below 10^16^ cm^−3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^−3^. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier‐density range.

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Effect of doping of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors
✍ Maria S. Hammer; Carsten Deibel; Jens Pflaum; Vladimir Dyakonov 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 908 KB

Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al dopin