## Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^−3^. Hole‐only diodes were used for densities below 10^16^ cm^−3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^−3^. To fill the gap, i
Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)
✍ Scribed by Tanase, C. ;Blom, P. W. M. ;de Leeuw, D. M. ;Meijer, E. J.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 259 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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## Abstract N‐type doping of poly(2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n‐type doping simultaneously suppresses the hole transport in MEH‐PPV.
We report measurements of the quantum efficiency and time decay of photoluminescence in the conjugated polymers poly(g phenylenevinylene) (PPV) and poly(Z-methoxy, 5-(2'ethyl-hexyloxy)-p-phenylenevinylene) (MEH-PPV). MEH-PPV is soluble and we measure values for the quantum yield for luminescence of