Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)
✍ Scribed by Mingtao Lu; Herman T. Nicolai; Gert-Jan A. H. Wetzelaer; Paul W. M. Blom
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 500 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0887-6266
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✦ Synopsis
Abstract
N‐type doping of poly(2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n‐type doping simultaneously suppresses the hole transport in MEH‐PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC‐doped MEH‐PPV polymer light‐emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011
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