Effect of doping of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors

✍ Scribed by Maria S. Hammer; Carsten Deibel; Jens Pflaum; Vladimir Dyakonov

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 908 KB
• Volume: 11
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2010.06.019

✦ Synopsis

Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al doping between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. electron mobility and morphology. With increasing doping level we observe on the one hand a decrease of the electron mobilities by two orders of magnitude, on the other hand doping enforces a morphological change of the zinc oxide layer which enables the infiltration of P3HT into the inorganic matrix. X-ray reflectivity (XRR) measurements confirm this significant change in the interface morphology for the various doping levels. We demonstrate that doping of ZnO is a tool to adjust the charge transport in ZnO/P3HT hybrids, using one single injecting metal (Au bottom contact) on a SiO 2 dielectric. We observe an influence of the zinc oxide layer on the hole mobility in P3HT which we can modify via Al doping of ZnO. Hence, maximum hole mobility of 5 Á 10 À4 cm 2 V À1 s À1 in the hybrid system with 2% Al doping. 5 at.% Al doping leads to a balanced mobility in the organic/inorganic hybrid system but also to a small on/off ratio due to high off-currents.