## Abstract We investigate the mobility of poly(3โhexylthiophene) (P3HT) over a carrierโdensity range from 10^15^ to 10^20^โcm^โ3^. Holeโonly diodes were used for densities below 10^16^โcm^โ3^ and fieldโeffect transistors were used for carrier densities higher than 10^18^โcm^โ3^. To fill the gap, i
Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)
โ Scribed by Pingel, P.; Schwarzl, R.; Neher, D.
- Book ID
- 119995338
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 329 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al dopin
## Abstract The hole mobility and power conversion efficiency of bulk heterojunction solar cells based on P3HTโtype donor polymers and the soluble fullerene derivative [6,6]โphenyl C~61~ butyric acid methyl ester (PCBM) as an acceptor both show a strong sensitivity to the introduction of interchain