Carrier-density dependence of the hole m
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Jakob J. Brondijk; Francesco Maddalena; Kamal Asadi; Herman J. van Leijen; Marti
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Article
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2011
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John Wiley and Sons
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English
⚖ 318 KB
## Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^−3^. Hole‐only diodes were used for densities below 10^16^ cm^−3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^−3^. To fill the gap, i