Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
β Scribed by Shuo Jia; Yong Cai; Deliang Wang; Baoshun Zhang; Lau, K.M.; Chen, K.J.
- Book ID
- 114618266
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 145 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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## Abstract AlGaN/GaN heterostructure devices are capable of delivering highβfrequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, th
Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma