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AlGaN-GaN HEMTs on patterned silicon (111) substrate

✍ Scribed by Shuo Jia, ; Dikme, Y.; Deliang Wang, ; Chen, K.J.; Lau, K.M.; Heuken, M.


Book ID
126500982
Publisher
IEEE
Year
2005
Tongue
English
Weight
195 KB
Volume
26
Category
Article
ISSN
0741-3106

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Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma