๐”– Bobbio Scriptorium
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Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

โœ Scribed by Chen, Kevin J. ;Zhou, Chunhua

Book ID
105366009
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
531 KB
Volume
208
Category
Article
ISSN
0031-8965

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โœฆ Synopsis

Abstract

AlGaN/GaN heterostructure devices are capable of delivering highโ€frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last few years have witnessed major effort in the development of AlGaN/GaN enhancementโ€mode (Eโ€mode) HEMTs and MISโ€HEMT. This paper attempts to review the latest progresses in this technology, including alternative approaches and device characteristics. Application examples of the Eโ€mode HEMT technology are also discussed.

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