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AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology

✍ Scribed by Marso, M. ;Javorka, P. ;Alam, A. ;Wolter, M. ;Hardtdegen, H. ;Fox, A. ;Heuken, M. ;Kordos, P. ;L�th, H.

Book ID
101384049
Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
82 KB
Volume
188
Category
Article
ISSN
0031-8965

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✦ Synopsis

The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is the transistor device itself. The RoundHEMT concept meets the need for a device technology with few fabrication steps that allows a fast feedback to epitaxy while providing an evaluation of important electrical and also processing data. Even though nearly identical Hall data on structures with different thickness and doping concentration of the AlGaN layers suggest similar device properties, the RoundHEMTs resolve remarkable differences in device performance. The best layer structure was used to fabricate HEMTs with I DS = 700 mA/mm, f T = 35 GHz, and f max = 70 GHz for L G = 0.2 mm.

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