✦ LIBER ✦

Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

✍ Scribed by Y. Cordier; M. Hugues; P. Lorenzini; F. Semond; F. Natali; J. Massies

Book ID: 104557517
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 201 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461470

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-Electron-Mobility AlGaN/GaN Transis

High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

✍ Neuberger, R. ;M�ller, G. ;Ambacher, O. ;Stutzmann, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 88 KB 👁 2 views

Optimization of two-dimensional electron

Optimization of two-dimensional electron gases and – characteristics for AlGaN/GaN HEMT devices

✍ Yan Wang; Long Ma; Zhiping Yu; Lilin Tian 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Theoretical model of transport character

Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors

✍ A. Asgari; M. Kalafi; L. Faraone 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 270 KB

Mechanisms of gate lag in GaN/AlGaN/GaN

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

✍ Oleg Mitrofanov; Michael Manfra 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 801 KB

Development and characteristic analysis

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

✍ Yue Hao; Chong Wang; JinYu Ni; Qian Feng; JinCheng Zhang; Wei Mao 📂 Article 📅 2008 🏛 SP Science China Press 🌐 English ⚖ 215 KB

Progress in High-Power, High Frequency A

Progress in High-Power, High Frequency AlGaN/GaN HEMTs

✍ Eastman, L.F. ;Tilak, V. ;Kaper, V. ;Smart, J. ;Thompson, R. ;Green, B. ;Shealy, 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 186 KB 👁 1 views