✦ LIBER ✦

Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers

✍ Scribed by Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T.

Book ID: 118246277
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 985 KB
Volume: 112
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4748315

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of carrier lifetime in 4H-

Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

✍ Danno, Katsunori; Nakamura, Daisuke; Kimoto, Tsunenobu 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 458 KB

Reduction of traps and improvement of ca

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

✍ Storasta, Liutauras; Tsuchida, Hidekazu 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 372 KB

The minority carrier lifetime of n-type

The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers

✍ Kordina, O.; Bergman, J. P.; Hallin, C.; JanzeÌn, E. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 680 KB

Slow de-trapping of minority holes in n-

Slow de-trapping of minority holes in n-type 4H-SiC epilayers

✍ Klein, P. B. ;Shrivastava, A. ;Sudarshan, T. S. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 421 KB

## Abstract The carrier lifetime in epilayers of n‐type 4H‐SiC with low concentrations of the __Z__~1/2~ lifetime killer has been investigated over a wide range of temperature under low injection conditions. It was found that in addition to the primary initial decay dominated by surface recombinati

Recombination processes controlling the

Recombination processes controlling the carrier lifetime in n[sup â]4HâSiC epilayers with low Z[sub 1/2] concentrations

✍ Klein, P. B.; Myers-Ward, R.; Lew, K.-K.; VanMil, B. L.; Eddy, C. R.; Gaskill, D 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 515 KB

A Comparison of the Microwave Photocondu

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

✍ Van Brunt, Edward; Agarwal, Anant; Burk, Al; Cheng, Lin; O’Loughlin, Michael; Pa 📂 Article 📅 2013 🏛 Springer US 🌐 English ⚖ 310 KB