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Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

✍ Scribed by Danno, Katsunori; Nakamura, Daisuke; Kimoto, Tsunenobu

Book ID
121386945
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
458 KB
Volume
90
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

Carrier lifetime investigation in 4H–SiC
Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy
✍ P. Grivickas; A. Galeckas; J. Linnros; M. SyvΓ€jΓ€rvi; R. Yakimova; V. Grivickas; πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 219 KB

Depth-resolved carrier lifetime measurements were performed in low-doped epitaxial layers of 4H silicon carbide samples. The technique used was a pump-and-probe technique where carriers are excited by an above-bandgap laser pulse and probed by free carrier absorption. Results from chemical vapour de