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Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

✍ Scribed by Storasta, Liutauras; Tsuchida, Hidekazu

Book ID: 120078069
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 372 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2472530

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