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Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation

✍ Scribed by B Holländer; S Mantl; R Liedtke; S Mesters; H.J Herzog; H Kibbel; T Hackbarth

No coin nor oath required. For personal study only.

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Enhanced strain relaxation of epitaxial SiGe layers on Si(1&#xa0;0&#xa0;0) after H+ ion implantation