Enhanced strain relaxation of epitaxial
Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation
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B Holländer; S Mantl; R Liedtke; S Mesters; H.J Herzog; H Kibbel; T Hackbarth
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Article
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1999
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Elsevier Science
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English
⚖ 874 KB