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Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

โœ Scribed by Sakiyama, Shin; Kaneko, Takahiro; Ootsubo, Takanobu; Sakai, Takatsugu; Nakashima, Kazutoshi; Moto, Kenta; Yoneoka, Masashi; Takakura, Kenichiro; Tsunoda, Isao

Book ID
122269224
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
862 KB
Volume
557
Category
Article
ISSN
0040-6090

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400 ยฐC Formation of poly-SiGe on Si
400 ยฐC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization
โœ Hiroshi Kanno; Tomohisa Aoki; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 255 KB

Au-induced low-temperature (400 1C) crystallization of amorphous-Si 1ร€x Ge x (x: 0-1) thin films on SiO 2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 mm/h was obtained in all Ge fractions. As a result, strain-free poly-Si 1ร€