✦ LIBER ✦

Influences of ion species (Ge+, Sb+, Au2+) on crystallization of amorphous Ge films induced by high energy ion irradiation

✍ Scribed by Setsuo Nakao; Kazuo Saitoh; Masami Ikeyama; Hiroaki Niwa; Seita Tanemura; Yoshiko Miyagawa; Soji Miyagawa

Book ID: 114168735
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 375 KB
Volume: 127-128
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(96)00856-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of ion irradiation on the stabili

Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

✍ R. De Bastiani; A.M. Piro; I. Crupi; M.G. Grimaldi; E. Rimini 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 364 KB

Amorphization kinetics of Ge2Sb2Te5 thin

Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation

✍ R. De Bastiani; A.M. Piro; M.G. Grimaldi; E. Rimini 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Effect of high-energy Si+ ion irradiatio

Effect of high-energy Si+ ion irradiation on the crystallization behavior of amorphous strontium titanate films

✍ Setsuo Nakao; Zhongchun Wang; Ping Jin; Yoshiko Miyagawa; Soji Miyagawa 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 215 KB

Influence of laser energy on the crystal

Influence of laser energy on the crystallization of Ge2Sb2Te5 thin film prepared by pulsed laser deposition

✍ Hu, D. Z. ;Pan, F. M. ;Lu, X. M. ;Zhu, J. S. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on