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Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation

โœ Scribed by R. De Bastiani; A.M. Piro; M.G. Grimaldi; E. Rimini

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
387 KB
Volume
257
Category
Article
ISSN
0168-583X

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Effects of dopants on the amorphous-to-f
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
โœ S. Privitera; E. Rimini; C. Bongiorno; A. Pirovano; R. Bez ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 329 KB

The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb