Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films

✍ Scribed by S. Privitera; E. Rimini; C. Bongiorno; A. Pirovano; R. Bez

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 329 KB
• Volume: 257
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.01.265

✦ Synopsis

The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb 2 Te 5 . Larger effects have been found in the case of nitrogen doping. On the contrary, doping with Fluorine produced a decrease in the crystallization temperature. The electrical properties have been related to the structural phase change through in situ transmission electron microscopy analysis. The comparison between undoped and doped Ge 2 Sb 2 Te 5 shows that the introduction of oxygen or nitrogen modifies in a different way the kinetics of the amorphous-to-fcc transition and gives new insight on the effects of doping with light elements in GeSbTe alloys.