The effects of nitrogen doping on the chemical bonding state, microstructure, electrical property and thermal stability of Ge 15 Sb 85 film were investigated in detail. The doped N atoms tend to bond with Ge to form Ge 3 N 4 , as proved by X-ray photoelectron spectroscopy analyses. X-ray diffraction
β¦ LIBER β¦
Effects of Ge doping on the properties of Sb2Te3 phase-change thin films
β Scribed by Jialin Yu; Bo Liu; Ting Zhang; Zhitang Song; Songlin Feng; Bomy Chen
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 228 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
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