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The effect of thickness on the Bi–Ge–Sb–Te films for reversible phase-change optical recording

✍ Scribed by Su-Shia Lin


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
347 KB
Volume
129
Category
Article
ISSN
0921-5107

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The effects of nitrogen doping on the chemical bonding state, microstructure, electrical property and thermal stability of Ge 15 Sb 85 film were investigated in detail. The doped N atoms tend to bond with Ge to form Ge 3 N 4 , as proved by X-ray photoelectron spectroscopy analyses. X-ray diffraction