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400 °C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

✍ Scribed by Hiroshi Kanno; Tomohisa Aoki; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

Book ID: 103846347
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 255 KB
Volume: 8
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2004.09.060

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✦ Synopsis

Au-induced low-temperature (400 1C) crystallization of amorphous-Si 1Àx Ge x (x: 0-1) thin films on SiO 2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 mm/h was obtained in all Ge fractions. As a result, strain-free poly-Si 1Àx Ge x with large areas (420 mm) were obtained at a low temperature (400 1C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

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400&#xa0;°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

✦ Synopsis

400 °C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization