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Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C

✍ Scribed by H. Nohira; T. Kuroiwa; M. Nakamura; Y. Hirose; J. Mitsui; W. Sakai; K. Nakajima; M. Suzuki; K. Kimura; K. Sawano; K. Nakagawa; Y. Shiraki; T. Hattori

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 166 KB
Volume: 237
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2004.06.042

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Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400&#xa0;°C

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C