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Properties of thick SiO2/Si structure formed at 120 °C by use of two-step nitric acid oxidation method

✍ Scribed by S. Imai; S. Mizushima; Asuha; W.-B. Kim; H. Kobayashi

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 561 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.03.025

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