Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO 2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than tha
β¦ LIBER β¦
Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure
β Scribed by Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao
- Book ID
- 113936566
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 630 KB
- Volume
- 451-452
- Category
- Article
- ISSN
- 0040-6090
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