Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures

✍ Scribed by K Prabhakaran; K Sumitomo; T Ogino

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 557 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00058-1

✦ Synopsis

In this paper, we describe the nano-interface engineering of CorGerSi system, involving interface reactions. Controlled annealing causes the Co atoms to diffuse through an already formed quantum dot network fabricated on a silicon substrate and get incorporated as epitaxial CoSi . Additionally, we performed in situ examination of the early stages of oxide 2 mediated epitaxial growth of silicide at the SiO rSi interface on a Si surface. Cobalt, deposited at room temperature on an 2 SiO layer, diffuses through the oxide layer and forms epitaxial CoSi at the interface, preserving the original oxide surface 2 2 morphology. These results suggest the possibility of an alternative and viable method to introduce functionality into nanostructures.