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Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

✍ Scribed by A. Kling; M.I. Ortiz; A.C. Prieto; A. Rodríguez; T. Rodríguez; J. Jiménez; C. Ballesteros; J.C. Soares

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 277 KB
Volume: 249
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2006.04.017

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