Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

✍ Scribed by Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

• Book ID: 103846332
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 294 KB
• Volume: 8
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2004.09.036

✦ Synopsis

Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO 2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO 2 single structure. As a result, poly-Si films with large areas ($10 mm for 5 h and $30 mm for 15 h) were obtained after 550 1C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.